Title:
ULTRAVIOLET LED FLIP CHIP
Document Type and Number:
WIPO Patent Application WO/2019/056539
Kind Code:
A1
Abstract:
An ultraviolet light-emitting diode (LED) flip chip, comprising: a substrate (1), and an epitaxial layer structure that is provided on the substrate (1), the epitaxial layer comprising: a buffer and nucleation layer (2), a superlattice structure (3), a heavily doped n-type AlGaN layer (4), a lightly doped n-type AlGaN layer (5), a quantum well active region (6), an electron blocking layer (7), a P-type conductive layer (8), a reflective layer (9), a current expanding layer (10), an insulation layer (11), and a conductive thin film layer (12), which are sequentially provided in a first direction. The first direction is perpendicular to the substrate and is directed from the substrate toward the epitaxial layer. The ultraviolet LED flip chip has the advantages of preventing leakage, having high light-emitting efficiency, having small voltage surge, preventing damage caused by electrostatic discharge, dissipating heat quickly, being highly reliable and so on.
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Inventors:
HE MIAO (CN)
YANG SIPAN (CN)
XIONG DEPING (CN)
WANG CHENGMIN (CN)
YANG SIPAN (CN)
XIONG DEPING (CN)
WANG CHENGMIN (CN)
Application Number:
PCT/CN2017/112257
Publication Date:
March 28, 2019
Filing Date:
November 22, 2017
Export Citation:
Assignee:
UNIV GUANGDONG TECHNOLOGY (CN)
International Classes:
H01L33/14; H01L33/46
Foreign References:
| CN103337568A | 2013-10-02 | |||
| CN106952987A | 2017-07-14 | |||
| CN103762286A | 2014-04-30 | |||
| JP2001036196A | 2001-02-09 |
Attorney, Agent or Firm:
UNITALEN ATTORNEYS AT LAW (CN)
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