WAFER CLEANING METHOD

WIPO Patent Application WO/2015/174004

A1

A wafer cleaning method of the present invention is characterized by including a cleaning process using ozone water and a cleaning process using hydrofluoric acid and having a spin-cleaning process using pure water between said cleaning process using ozone water and said cleaning process using hydrofluoric acid, thereby performing cleaning in the following order: (1) cleaning process using ozone water; (2) spin-cleaning process using pure water; and (3) cleaning process using hydrofluoric acid. Alternatively the wafer cleaning method performs cleaning in the following order: (1) cleaning process using hydrofluoric acid; (2) spin-cleaning process using pure water; and (3) cleaning process using ozone water. In the wafer cleaning method, a flow rate of pure water in said spin-cleaning process using pure water is 1.2 L/min or more and the number of wafer revolutions is 1,000 rpm or more. This provides a wafer cleaning method that prevents the wafer surface roughness after cleaning from deteriorating and improves the particle residue present in the outer peripheral portion of a wafer after cleaning.

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IGARASHI KENSAKU (JP)
ABE TATSUO (JP)

PCT/JP2015/001462

November 19, 2015

March 17, 2015

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SHINETSU HANDOTAI KK (JP)

H01L21/304

JPH09321009A	1997-12-12
JP2009054985A	2009-03-12

YOSHIMIYA, Mikio (JP)
Good Miya Mikio (JP)

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