Title:
WIRING SUBSTRATE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2013/021750
Kind Code:
A1
Abstract:
Provided is a highly reliable wiring substrate with which the thickness of layers provided on a substrate does not increase, heat dissipation is high and also adhesion with a sealing resin is good, and also provided are a method for manufacturing the wiring substrate and a semiconductor device in which a semiconductor element is mounted on this wiring substrate. A wiring substrate (1) of the present invention includes a substrate (2) comprising an insulation layer, and wiring (3) disposed on one side surface of the substrate (2). The wiring (3) has a porous electrically conductive layer comprising a large number of holes therein, and the area of the surface of the wiring (3) at the substrate (2) side is different to the area of the surface opposite the surface at the substrate (2) side.
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Inventors:
WATANABE MASATO (JP)
HIKASA KAZUHITO (JP)
HIKASA KAZUHITO (JP)
Application Number:
PCT/JP2012/066870
Publication Date:
February 14, 2013
Filing Date:
July 02, 2012
Export Citation:
Assignee:
FURUKAWA ELECTRIC CO LTD (JP)
WATANABE MASATO (JP)
HIKASA KAZUHITO (JP)
WATANABE MASATO (JP)
HIKASA KAZUHITO (JP)
International Classes:
H05K1/09; H01L23/12
Foreign References:
JP2010272835A | 2010-12-02 | |||
JP2010161127A | 2010-07-22 | |||
JP2010251446A | 2010-11-04 | |||
JP2006173399A | 2006-06-29 | |||
JPH09130046A | 1997-05-16 | |||
JP2003188316A | 2003-07-04 | |||
JP2006228804A | 2006-08-31 |
Other References:
See also references of EP 2744310A4
Attorney, Agent or Firm:
MATSUSHITA, MAKOTO (JP)
Matsushita δΊ® (JP)
Matsushita δΊ® (JP)
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Claims: