Title:
X-RAY IMAGE SENSOR SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2015/019609
Kind Code:
A1
Abstract:
A thin film transistor substrate (2) is configured from: an auxiliary capacitor electrode (7); a gate insulating film (8) provided on an insulating substrate (4) in a manner so as to cover the auxiliary capacitor electrode (7); a drain electrode (11) provided on an oxide semiconductor layer (9) and on the gate insulating film (8); a flattening film (13) provided on a passivation film (12); a capacitor electrode (14) provided on the flattening film (13); an inter-layer insulating film (16) provided on the flattening film (13); and a pixel electrode (17) formed on the inter-layer insulating film (16) and electrically connected to the drain electrode (11) via a contact hole (18).
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Inventors:
FUJIWARA MASAKI
TANAKA KOHHEI
TANAKA KOHHEI
Application Number:
PCT/JP2014/004095
Publication Date:
February 12, 2015
Filing Date:
August 05, 2014
Export Citation:
Assignee:
SHARP KK (JP)
International Classes:
H01L27/146; H01L27/144
Foreign References:
| JP2004087604A | 2004-03-18 | |||
| JP2008177556A | 2008-07-31 | |||
| JP2004040115A | 2004-02-05 | |||
| JP2013205140A | 2013-10-07 |
Attorney, Agent or Firm:
MAEDA & PARTNERS (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
Patent business corporation MAEDA PATENT OFFICE (JP)
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