| Document |
Document Title |
|
JP5911576B2 |
Provided is a tungsten alloy part which comprises tungsten and at least two types of components selected from the group consisting of Zr, ZrO 2 , ZrC and C. This tungsten alloy part contains 0.1-5 wt% of Zr in terms of ZrO 2 .
|
|
JP5907522B2 |
To provide a method for manufacturing a filament, in which welding of filament strands having a small radius of curvature and serving as a high luminance electron beam source and a diameter reducing process of a thermionic emission part ...
|
|
JP2016058348A |
To provide an impregnation type cathode body structure capable of improving a strength of bonding between a heater and a support.An impregnation type cathode body structure 1 includes: a cathode substrate 10 in which an electron emissive...
|
|
JP5899187B2 |
|
|
JP5891638B2 |
|
|
JP2016035842A |
To provide an anisotropic conductor film which enables the increase in endurance when used for an FE device and the like even if there is a remaining gas in vacuum or an adsorbate such as a water content on a leading end of a conductor f...
|
|
JP5881176B2 |
A phosphor substituting the conventional sialon phosphor or oxide phosphor activated by rare earth and an application thereof are provided. The phosphor of the present invention comprises an inorganic crystal including at least La, Si, A...
|
|
JP5881740B2 |
The purpose of the present invention is to obtain a tungsten alloy having emission characteristics equal to or greater than a thorium-containing tungsten alloy, without using thorium, which is a radioactive substance; and to provide a di...
|
|
JP5881741B2 |
Provided is a method for producing a tungsten alloy that does not contain any thorium which is a radioactive material, that is equal to or higher in emission characteristics than a thorium-containing tungsten alloy, and that can be used ...
|
|
JP5881742B2 |
It is an object to provide a tungsten alloy containing no thorium which is a radioactive material, which is equal to or higher in emission characteristics than a thorium-containing tungsten alloy, and a discharge lamp, a transmitting tub...
|
|
JP5878222B2 |
|
|
JP5865527B2 |
|
|
JP5860412B2 |
|
|
JP5837289B2 |
Phosphor powders and a method for making phosphor powders. The phosphor powders have a small particle size, a narrow particle size distribution and are substantially spherical. The method of the invention advantageously permits the econo...
|
|
JP2015232952A |
To provide a cathode acquisition method by which a required brightness is obtained.A cathode acquisition method comprises: a step S106 of producing a plurality of cathodes having an electron emission member and also having a cover part c...
|
|
JP5836866B2 |
A carbon electrode of an embodiment includes: a graphene having a graphene skeleton, carbon atoms in the graphene skeleton being partially substituted by a nitrogen atom, wherein the graphene contains an oxygen atom, and the carbon elect...
|
|
JP5828429B2 |
A photocathode high-frequency electron-gun cavity apparatus of the present invention is provided with a high-frequency acceleration cavity (1), a photocathode (8, 15), a laser entering port (9), a high-frequency power input coupler port ...
|
|
JP5818937B2 |
An electron emission device includes a number of electron emission units spaced from each other, wherein each of the number of electron emission units includes a first electrode, a semiconductor layer, an electron collection layer, an in...
|
|
JP5816699B2 |
A light emitting device and a manufacturing method thereof are provided. The light emitting device (10) comprises a light emitting substrate (13) and a metal layer (14) having irregularly arranged nano-particles structure formed on a sur...
|
|
JP5818935B2 |
|
|
JP5816698B2 |
A light emission apparatus (10) and a manufacturing method thereof are provided. The light emission apparatus includes a light emission base body (13) and a metal layer (14) with metal microstructure. The metal layer is set on the surfac...
|
|
JP5818936B2 |
|
|
JP2015201412A |
To provide a micro electron emission source in which positions of a center of a gate opening and a tip of an emitter electrode coincide, an electron source array, and a manufacturing method of the same.The manufacturing method of an elec...
|
|
JP5808021B2 |
This invention provides a treatment device for lowering electron affinity, said treatment device being capable of performing an EA surface treatment on a photocathode material or an EA surface retreatment on a photocathode, and an electr...
|
|
JP5806876B2 |
|
|
JP5794598B2 |
A metal hexaboride nanowire such as LaB6 with the formed metal-terminated (100) plane at the tip has a small work function, and can emit a very narrow electron beam from the (100) plane. In such emitters, contamination occurs in a very s...
|
|
JP5795330B2 |
An electron emission element (1) includes an electrode substrate (2) and a thin film electrode (3), and emits electrons from the thin film electrode (3) by voltage application across the electrode substrate (2) and the thin film electrod...
|
|
JP5792288B2 |
The invention relates to a light source for generating light having a spectral emittance in at least a part of the range of 380 nm to 680 nm. The light has a spectral power distribution E(λ) as a function of the wave-length λ over a fi...
|
|
JP2015170478A |
To prevent contact of a grid mesh with a cathode due to thermal expansion deformation, without requiring any special processing of the grid mesh.In the electrode structure of an electron gun where a grid mesh 1 is disposed on the front s...
|
|
JP5784354B2 |
|
|
JP5783798B2 |
|
|
JP5778179B2 |
An infrared external photoemissive detector can have an n-p heterojunction comprising an n-type semiconductor layer and a p-layer; the n-layer semiconductor comprising doped silicon embedded with nanoparticles forming Schottky barriers; ...
|
|
JP5762411B2 |
Systems and methods are provided for field emission device. An array of carbon nanotubes is arranged in a variable height distribution over a cathode substrate. An anode is provided to accelerate the emitted electrons toward an x-ray pla...
|
|
JP5757957B2 |
|
|
JP5756728B2 |
To provide a heat exchanging device that forms an electric field for ion wind generation without depending on a heat sink and exhibits heat exchanging performance for a heat-exchanged body of any size in any shape by providing a hole ele...
|
|
JP5753420B2 |
A system and method for controlling the temperature of both an electron emitter (20) and a filament (22) to their lowest possible operating temperature is disclosed. The apparatus (10) includes a filament (22), an electron emitter (20) h...
|
|
JP5742055B2 |
The SrTiO3 buffer layer is formed by lamination of the Sr2+O2− layer and the Ti4+O24− layer. The surface of the buffer layer is terminated with the Ti4+O24− layer. On the buffer layer, a LaAlO3 thin film layer is formed. The thin f...
|
|
JP2015117384A |
To provide an anisotropic conductive film which includes a pore structure composed of an anodized metal film having plural pores and a conductor formed in the inside of at least a part of the plural pores, in which the conductor in the p...
|
|
JP5738941B2 |
A field emission electron source includes a linear carbon nanotube structure, an insulating layer and at least one conductive ring. The linear carbon nanotube structure has a first end and a second end. The insulating layer is located on...
|
|
JP5730286B2 |
The invention relates to luminous substances which contain Eu2+ doping and at least one silicate mineral from the garnet group and/or a mono and/or polycrystalline yttrium-aluminum garnet (YAG) and/or a luminous substance derived from Y3...
|
|
JP2015106476A |
To provide an anisotropic conductive film which includes a porous structure comprising an anode oxide metal film having a plurality of through holes and a conductor selectively formed at an inside of part of through holes among the plura...
|
|
JP5723440B2 |
The present invention relates to a field emission cathode, comprising an at least partly electrically conductive base structure, and a plurality of electrically conductive micrometer sized sections spatially distributed at the base struc...
|
|
JP5723379B2 |
|
|
JP5723099B2 |
|
|
JP2015515091A |
The present disclosure relates to an image capture device with an inner gap that provides an unobstructed space between additional constructive electron emission and electron acceptor constructs, including electron acceptor constructs an...
|
|
JP5721545B2 |
An apparatus, comprising: a layer of group III-nitride having a top surface, the top surface having a plurality of pyramidal structures of the group III-nitride; a metallic electrode located directly on a flat surface of the layer betwee...
|
|
JP2015095340A |
To provide an electron emission element which can obtain a high electron emission amount, which can prevent a surface electrode from being excessively destructed or can reduce destruction, and which can prolong its life.Disclosed is an e...
|
|
JP5719162B2 |
The disclosed embodiments include embodiments such as an X-ray tube cathode filament system. The X-ray tube cathode filament system includes a substrate and a coating disposed on the substrate. In this cathode filament system, an electro...
|
|
JP2015084332A |
To manufacture a flexible organic light-emitting device (OLED) having improved electroluminescent characteristics as well as such an advantage that the device can be easily manufactured by vacuum vapor deposition technology typically use...
|
|
JP5703527B2 |
|
