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JP5110190B2 |
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JP5102968B2 |
An amorphous carbon layer sticking on a carbon nanotube surface is remarkably reduced when a carbon nanotube is joined to a conductive substrate by bringing a single fibrous carbonaceous material in contact with the tip of the conductive...
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JP5099331B2 |
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JP5102193B2 |
A thermionic electron source includes a substrate, two electrodes, and a thermionic emitter. The thermionic emitter is electrically connected to the two electrodes. The substrate has a recess formed on a surface thereof, and the thermion...
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JP5100067B2 |
To reduce the temperature dependence of luminance or luminous efficiency. The fluorescent material has as the constitutional elements at least one element selected from Mg, Ca, Sr and Ba, at least one element selected from Si and Ge, at ...
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JP5093791B2 |
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JP5097999B2 |
The inventive white-light emitting luminescent conversion LED uses a chlorosilicate luminous substance which is doped with europium in addition to containing Ca and Mg and a garnet rare-earth substance, especially Y and/or Tb. This resul...
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JP5098048B2 |
The present invention relates to a field emission display and a manufacturing method of the same having selective positioning of electron field emitters. More specifically, the present invention provides a field emission display and a ma...
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JP5090917B2 |
A method for forming cathodes for use in field emission devices using nanoparticles, such as carbon nanotubes (CNTs), is disclosed. The CNT layer comprises the electron emitting material on the surface of the cathode. Using the methods o...
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JP5082849B2 |
To provide an electron emitter, a field emission display unit, a cold cathode fluorescent tube and a flat type lighting device, which employ an electron emitting material producible at a low cost and in a large amount. A conductive mayen...
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JP5086503B2 |
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JP5082186B2 |
This method of forming a carbonaceous material projection structure includes: the step of applying a resist 11 onto a diamond substrate 10; the step of forming holes 12 in the applied resist 11, the holes 12 being provided according to a...
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JP5083874B2 |
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JP5075007B2 |
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JP5074902B2 |
To provide an electron emitting source that is hard to receive ion damages, thereby having a long lifetime. The electron emitting source is an electron gun for an electron beam vapor deposition device, an electron beam welding device, or...
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JP5074879B2 |
Electron-emissive drive units of electron-emissive elements capable of being arranged with a smaller pitch. FET and emitter array units exist in matrix element areas partitioned by a control wiring and data wiring. An exemplary unit is c...
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JP5074810B2 |
To provide the field emission type light-emitting device which can make a brightness of light-emitting face uniform. The light-emitting device 10 comprises the field emission type electron source 4 consisting of a cathode electrode 42 an...
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JP5073721B2 |
An electron emitting element of the present invention includes an electron acceleration layer that includes insulating fine particles but does not include conductive fine particles, the electron acceleration layer being provided between ...
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JP5073370B2 |
To provide a method of manufacturing a dielectric device which achieves better characteristics, while improving the film-forming properties of a dielectric layer. The method of manufacturing the dielectric device includes following steps...
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JP2012216441A |
To provide a field emission lamp that has a bipolar structure owing to resistance to ion attack.In the field emission lamp having a cathode electrode, a field emission layer disposed on a surface of the cathode electrode, an anode electr...
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JP5069486B2 |
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JP5065554B2 |
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JP5067652B2 |
To detect a consumption state of a filament by the thinning degree (changes in cross section) of the filament, and especially detect the thinning degree (changes in cross section) of the filament without measuring a current value of an e...
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JP2012212637A |
To provide an electron beam source device that can radiate an electron beam uniformly and stably, and an electron beam excitation type light source device that can provide a high light emission efficiency.An electron beam source device i...
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JP5065080B2 |
Phosphor and a plasma display device are provided whose deterioration in brightness of phosphors and a degree of change in chromaticity are alleviated and whose discharge characteristics are improved and that has excellent initial charac...
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JP5062761B2 |
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JP5063002B2 |
To provide an electron emitter capable of demonstrating field emission characteristics same as or superior to a Spindt type and low in manufacturing cost. The electron emitter 10 of field emission type has tables 14 of a certain height i...
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JP5064228B2 |
A photocatalytic cleaner for air or water includes a photocatalytic material coating a substrate. An anode, positioned a predetermined distance from the substrate, includes a phosphor that emits ultraviolet light in response to bombardme...
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JP5062748B2 |
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JP5063715B2 |
An electron source is implemented which has a lower work function of an electron emission surface, yields emitted electrons of a narrower energy bandwidth and higher current density, and lasts longer than existing Zr/O/W electron sources...
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JP5054896B2 |
To provide a treatment method for carbon nano-wall, which is a new carbon structure having a nanometer scale, a carbon nano-wall and a carbon nano-wall device. The shape treatment is conducted for the carbon nano-wall (CNW). As the shape...
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JP5055656B2 |
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JP5055655B2 |
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JP5048907B2 |
The invention relates to a cathode ray tube equipped with at least one oxide cathode comprising a cathode carrier having a cathode base of a first cathode metal and having a covering layer of ultrafine metal particles that contain nickel...
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JP5050074B2 |
The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the i...
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JP5053524B2 |
A dielectric-film-type electron emitter includes an emitter section (12), a first electrode (14), and a second electrode (16). The emitter section is formed of a thin layer of a polycrystalline dielectric material. The dielectric materia...
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JP5049505B2 |
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JP2012195144A |
To provide an electron beam source device capable of uniformly and stably radiating electron beams, and an electron beam excitation type light source device capable of obtaining high light emission efficiency.An electron beam source devi...
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JP2012195112A |
To provide a field emission light-emitting device in which the loss of radiation light emitted from a phosphor can be reduced with a simple structure.A field emission light-emitting device 10 comprises an anode substrate 1 having a subst...
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JP5047062B2 |
To provide a thermionic electron emission cathode in which by suppressing reaction consumption with the passage of time at a cathode tip holding part in a conventional thermionic electron emission cathode, remarkably stable electron beam...
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JP5044005B2 |
In the present invention, heat dissipation is improved by extending the creepage distance in a vacuum vessel according to the size of a flange portion, without lengthening the vacuum vessel in the direction in which an electron beam is e...
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JP5039688B2 |
A method of treating a lamp tube having a first end and a second end comprising introducing a first quantity of a luminescent substance into the first end of the lamp tube and introducing a second quantity of a luminescent substance into...
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JP5037949B2 |
A device vaporizes organic materials onto a substrate surface to form a film. The device includes a vaporization apparatus to receive a quantity of organic material that can have one or more components each having a different vaporizatio...
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JP5038109B2 |
A method for fabricating a surface-conduction electron emitter includes the steps of: (a) providing a substrate; (b) disposing two lower layers on the surface of the substrate, the two lower layers are parallel and apart from each other;...
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JP2012186073A |
To provide an electron source array which improves focusing effect of electron beams and increases the electron beam amount while suppressing the occurrence of leak current.An electron source array 10 includes an emitter electrode 11, a ...
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JP5034804B2 |
A diamond electron source in which a single sharpened tip is formed at one end of a pillar-shaped diamond monocrystal of a size for which resist application is difficult in a microfabrication process, as an electron emission point used i...
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JP5036465B2 |
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JP5032734B2 |
A mercury-free high-pressure gas discharge lamp (HID [high intensity discharge] lamp) is described which is provided for use in automotive technology. To achieve improved lamp characteristics, in particular a substantially equal luminous...
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JP5032827B2 |
The present invention aims to suppress calorific value and prolong a lifetime of an apparatus that generates soft X-rays. Thus, the present invention provides a static elimination apparatus that includes an emitter as an electron emittin...
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JP5033892B2 |
The present invention provides an electron emitting element, comprising: a first electrode; an insulating fine particle layer formed on the first electrode and composed of insulating fine particles; and a second electrode formed on the i...
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