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JP4976344B2 |
A structure comprising: a plate (40); an electron emissive element (104) overlying the plate; a support region (102,108) overlying the plate; and a getter region (112) overlying at least part of the support region, a composite opening ex...
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JP4976277B2 |
Backthinning in an area selective manner is applied to imaging sensors 12 for use in electron bombarded devices. A further arrangement results in an array of collimators 51 aligned with pixels 42 or groups of pixels providing improved im...
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JP4977006B2 |
An electron beam irradiator capable of performing electron beam irradiation in a wide area at a high current density with a field emitter tip. The electron beam irradiator comprises: a vacuum chamber having a beam irradiation window form...
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JP4975400B2 |
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JP4974046B2 |
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JP4966287B2 |
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JP4965221B2 |
The present invention includes a chemical monolayer construction that comprises: (a) a substrate having a contact surface; and (b) a plurality of substantially parallel molecular units, wherein said molecular units are attached to said s...
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JP4961629B2 |
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JP4959680B2 |
[PROBLEMS] To provide an electron emitting layer with improved efficiency of electron emission and prevented damage of the device. [SOLVING MEANS] An electron emitting device including an amorphous electron supply layer 4, an insulating ...
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JP4964478B2 |
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JP4960695B2 |
To provide an image display device including a lower electrode, an upper electrode, and an electron acceleration layer composed of an insulator or a semiconductor provided there between, and further including a thin film electron source ...
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JP2012119076A |
To provide a light-emitting device having a high light extraction efficiency.The light-emitting device has: a substrate; and a light-emitting layer located on a surface of the substrate. The light-emitting layer has at least one region w...
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JP4956732B2 |
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JP4959188B2 |
An object of the present invention is to provide a lead-free bismuth glass wherein decrease of the degree of accuracy of the patterning is prevented. Specifically, the present invention provides a lead-free bismuth glass characterized in...
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JP2012113999A |
To solve the problem that the distance between a gate and a cathode is reduces when the gate is thermally expanded in an electron emission element in which an electron is emitted from the cathode to the gate to further increase an electr...
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JP4953065B2 |
The present invention aims at providing a blue-aimed phosphor powder which is more excellent in emission characteristic than the conventional rare-earth activated sialon phosphors and which is more excellent in durability than the conven...
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JP4950536B2 |
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JP2012109027A |
To improve luminance unevenness while maintaining the brightness of a screen, in an electron beam display in which each of electron-emitting elements 10 emits an electron beam 5 by which a current density on an irradiation surface of the...
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JP4944625B2 |
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JP4948939B2 |
To provide a carbon nanotubes synthesis method by which oriented carbon nanotubes can be synthesized on a silicon substrate by uniformizing the particle diameter and the distribution of catalytic fine particles on the substrate. When the...
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JP4947837B2 |
A night vision device (10) with an image intensifier tube (14) includes an improved microchannel plate (22) which has an extraordinarily low indigenous population of gas molecules. Because of this low population of gas molecules, positiv...
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JP4947486B2 |
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JP4948766B2 |
A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different material...
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JP2012103614A |
To provide a display panel which achieves light weight and low costs without reducing reinforcement strength.A display panel comprises a vacuum vessel 10 having a front substrate to which a front plate is bonded, a back substrate which i...
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JP4944408B2 |
To provide a phosphor excellent in a controlling property of electric conductivity and exhibiting fluorescence in a visible region. The oxide comprises at least four kinds of elements: a first element which is In, a second element M2 sel...
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JP4940392B2 |
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JP4938999B2 |
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JP4934996B2 |
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JP2012094548A |
To solve the problem that conventional television sets are mainly thin energy-saving types, and gas television sets are only cathode-ray tube types, and were becoming articles that a weak people cannot afford to buy since Sharp(TM)'s liq...
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JP4932864B2 |
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JP4931176B2 |
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JP4927352B2 |
To provide an imaging device that shows high resolution and high luminance and produces good-quality images, an imaging device includes phosphor layer having a thickness of 40 mum or less and containing a phosphor having a composition re...
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JP4926470B2 |
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JP4927126B2 |
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JP4924989B2 |
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JP2012077206A |
To obtain a phosphor film that enhances a binding force between phosphor particles while inhibiting reduction of luminance of the phosphor film.The method of producing the phosphor film includes: forming a phosphor particle layer where a...
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JP4917121B2 |
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JP4920925B2 |
An electron-emitting device having little dispersion of its electron emission characteristic and a suppressed "fluctuation" of its electron emission quantity is provided. The electron-emitting device includes a substrate equipped with a ...
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JP4914608B2 |
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JP2012069459A |
To provide an imaging apparatus which can image with high sensitivity and high resolution.An imaging apparatus 1 comprises: a vacuum vessel 10; a support substrate 11; an antenna layer 12; a photoelectric conversion layer 13; a micro cha...
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JP2012069349A |
To provide an electron emission element reducing the occurrence of dielectric breakdown, enabling low-cost manufacturing, and allowing stable electron emission with a good amount.An electron emission element 1 includes an electron accele...
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JP4908537B2 |
A field emission device includes a transparent plate, an insulating substrate, one or more grids located on the insulating substrate. Each grid includes a first, second, third and fourth electrode down-leads and a pixel unit. The first, ...
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JP4910327B2 |
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JP2012063426A |
To form a light take-out structure that efficiently takes out light emitted from a light emission layer displaying an image by light emission.A capture layer 16 is formed on a film 14 of a first optically transparent material provided on...
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JP2012064347A |
To easily form a structure in which materials having mutually different refraction factors are periodically arranged and which is required as a light extracting structure, without leaving high polymer materials.A coated film of an inorga...
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JP4904364B2 |
A field emission pixel includes a cathode on which a field emitter emitting electrons is formed, an anode on which a phosphor absorbing electrons from the field emitter is formed, and a thin film transistor (TFT) having a source connecte...
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JP2012059414A |
To provide an image tube that adjusts a brightness value of a visible light image to be output to the outside.The image tube includes: an input part having a photocathode capable of emitting electrons; an output part which is arranged op...
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JP4899574B2 |
In a matrix electron emitter display using a thin-film electron emitter, a required resistance value of a top electrode, which value is determined by voltage drop at the top electrode, is small, and selection of a material and film thick...
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JP4896465B2 |
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JP4895680B2 |
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