Title:
【発明の名称】プラズマ密度またはその分布の制御方法
Document Type and Number:
Japanese Patent JP2003524706
Kind Code:
A
Abstract:
Magnetron source has a target configuration with a sputter surface, a magnet configuration generating above the sputter surface a magnetic field which forms, in top view onto the sputter surface, at least one magnet field loop. Viewed in a cross-sectional direction upon the target configuration, a tunnel-shaped arc magnet field is formed and further an electrode configuration is provided which generates, when supplied by a positive electric potential with respect to an electric potential applied to the target configuration, an electric field which crosses at an angle the magnetic field and wherein the electrode configuration comprises a distinct electrode arrangement in a limited segment area of the electrode configuration, which is substantially shorter than the overall length of the magnet field loop. The electrode arrangement along the limited segment area is electrically isolated from the remainder of the electrode configuration so as to be electrically operated differently than the remainder of the electrode configuration.
Inventors:
Krasnitzer, Siegfried
Application Number:
JP2001562732A
Publication Date:
August 19, 2003
Filing Date:
January 12, 2001
Export Citation:
Assignee:
Unakis Balzers Akchengezel Shaft
International Classes:
C23C14/35; H01J37/34; (IPC1-7): C23C14/35; H01J37/34
Domestic Patent References:
| JPH06510334A | 1994-11-17 | |||
| JPH04259372A | 1992-09-14 | |||
| JPS63312973A | 1988-12-21 | |||
| JPH0853764A | 1996-02-27 | |||
| JP2000319780A | 2000-11-21 |
Foreign References:
| US5345207A | 1994-09-06 | |||
| US5512150A | 1996-04-30 |
Attorney, Agent or Firm:
Fukami Hisaro (5 others)