Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019054301
Kind Code:
A
Abstract:
To provide a transistor which uses an oxide semiconductor having high electron field-effect mobility and less variation in threshold voltage and high reliability; and provide a semiconductor device which uses the transistor and achieves high performance difficult to achieve until now.SOLUTION: In a semiconductor device, an oxide semiconductor film containing two or more, favorably three or more elements selected from indium, tin, zinc and aluminum is used for a transistor. The oxide semiconductor film is deposited while hating a substrate. Further, in a making process of the transistor, oxygen is supplied to the oxide semiconductor film by a neighboring insulation film and/or ion implantation and oxygen deficiency which becomes a carrier generation source is reduced without limit. In addition, in the making process of the transistor, by highly purifying the oxide semiconductor film, a hydrogen concentration is extremely decreased.SELECTED DRAWING: Figure 1
Inventors:
NODA KOSEI
YAMAZAKI SHUNPEI
HONDA TATSUYA
SEKINE YUSUKE
TOMATSU HIROYUKI
YAMAZAKI SHUNPEI
HONDA TATSUYA
SEKINE YUSUKE
TOMATSU HIROYUKI
Application Number:
JP2019003977A
Publication Date:
April 04, 2019
Filing Date:
January 14, 2019
Export Citation:
Assignee:
SEMICONDUCTOR ENERGY LAB CO LTD
International Classes:
H01L29/786; H01L21/336; H01L21/8242; H01L27/108; H01L27/1156; H01L29/788; H01L29/792
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Foreign References:
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