Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2019054300
Kind Code:
A
Abstract:
To provide a semiconductor device having a gate insulation film with high breakdown voltage.SOLUTION: A semiconductor device of an embodiment comprises: a SiC substrate; a SiC layer which is provided on the SiC substrate and has a trench extending from a surface toward the SiC substrate; first conductivity type first SiC regions provided in the SiC layer; a second conductivity type second SiC region provided between the first SiC region and the SiC substrate; a first conductivity type third SiC region provided between the second SiC region and the SiC substrate; a gate insulation film provided on lateral faces and a bottom face of the trench; and a gate electrode provided on the gate insulation film. A boundary between the second SiC region and the third SiC region contacts the lateral faces of the trench; and the boundary has a first region and a distance from a surface of the SiC layer increases with increasing distance from the trench; and a distance between a virtual plane which includes an end of the gate electrode on the bottom face side and is parallel to a surface and the second SiC region is larger than half a distance between the third SiC region and the first SiC region.SELECTED DRAWING: Figure 1
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Inventors:
OHASHI TERUYUKI
IIJIMA RYOSUKE
IIJIMA RYOSUKE
Application Number:
JP2019003427A
Publication Date:
April 04, 2019
Filing Date:
January 11, 2019
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/739
Domestic Patent References:
| JP2009260253A | 2009-11-05 | |||
| JP2010098326A | 2010-04-30 | |||
| JP2013201361A | 2013-10-03 | |||
| JP2012178536A | 2012-09-13 | |||
| JP2001339063A | 2001-12-07 | |||
| JP2015056542A | 2015-03-23 | |||
| JP2012164707A | 2012-08-30 | |||
| JP2013093560A | 2013-05-16 | |||
| JP2013214568A | 2013-10-17 |
Foreign References:
| US20120049902A1 | 2012-03-01 |
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Masahiro Takashita
Akira Sudo
Masahiro Takashita