Title:
METHOD FOR PROCESSING SUBSTRATE
Document Type and Number:
Japanese Patent JP2019114778
Kind Code:
A
Abstract:
To provide a method for processing a substrate.SOLUTION: In one embodiment, there is provided a method for processing a substrate. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from processing gas. The organic film is formed in a state where the substrate is placed in a processing space within a chamber. When the organic film is formed, first gas containing a first organic compound is supplied toward the substrate, and then, second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.SELECTED DRAWING: Figure 1
Inventors:
TABATA MASAHIRO
HISAMATSU TORU
KUMAKURA SHO
ASAKO RYUICHI
ISHIKAWA SHINYA
HONDA MASANOBU
HISAMATSU TORU
KUMAKURA SHO
ASAKO RYUICHI
ISHIKAWA SHINYA
HONDA MASANOBU
Application Number:
JP2018195950A
Publication Date:
July 11, 2019
Filing Date:
October 17, 2018
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065
Domestic Patent References:
| JPH0233153A | 1990-02-02 | |||
| JP2017073535A | 2017-04-13 | |||
| JP2010532917A | 2010-10-14 | |||
| JP2008524851A | 2008-07-10 |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Yoshiki Kuroki
Junji Kashiwaoka
Yoshiki Kuroki
Junji Kashiwaoka