Title:
THERMISTOR, METHOD FOR MANUFACTURING THE SAME, AND THERMISTOR SENSOR
Document Type and Number:
Japanese Patent JP2019114779
Kind Code:
A
Abstract:
To provide: a thermistor in which a change in resistance value before and after heat resistance testing is reduced, and a high B constant is obtained; a method for manufacturing the thermistor; and a thermistor sensor.SOLUTION: A thermistor 1 formed on a substrate 2 includes an intermediate lamination part 7 formed on the substrate, and a main metal nitride film layer 4 formed on the intermediate lamination part from a thermistor material of a metal nitride. The intermediate lamination part includes a base thermistor layer 3 formed from a thermistor material of a metal nitride, and an intermediate oxynitride layer 3a formed on the base thermistor layer. The main metal nitride film layer is formed on the intermediate oxynitride layer. The intermediate oxynitride layer is a metal oxynitride layer formed by oxidation of the thermistor material of the base thermistor layer immediately below.SELECTED DRAWING: Figure 1
More Like This:
| JP7281301 | temperature sensor |
| JP2000252103 | THERMISTOR ELEMENT |
| JPH02123702 | MANUFACTURE OF SEMICONDUCTOR DEVICE |
Inventors:
FUJITA TOSHIAKI
SUZUKI SHUMPEI
SAKO NAGISA
CHITOSE NORIHISA
NAGATOMO KENSHO
SUZUKI SHUMPEI
SAKO NAGISA
CHITOSE NORIHISA
NAGATOMO KENSHO
Application Number:
JP2018202680A
Publication Date:
July 11, 2019
Filing Date:
October 29, 2018
Export Citation:
Assignee:
MITSUBISHI MATERIALS CORP
International Classes:
H01C7/04
Domestic Patent References:
| JP2017163127A | 2017-09-14 | |||
| JP2004319737A | 2004-11-11 | |||
| JP2015053356A | 2015-03-19 |
Attorney, Agent or Firm:
Hideyuki Sugiura