Title:
MANUFACTURING METHOD OF SiC INGOT MANUFACTURING SUBSTRATE, AND SiC INGOT MANUFACTURING SUBSTRATE
Document Type and Number:
Japanese Patent JP2019156659
Kind Code:
A
Abstract:
To provide a SiC ingot manufacturing substrate formed by bonding, without using an adhesive, a SiC substrate on which a SiC ingot is deposited to a support substrate to which the SiC substrate is bonded.SOLUTION: A manufacturing method of a SiC ingot manufacturing substrate includes a formation step for forming a SiC intermediate layer on at least either of joining schedule surfaces for joining a SiC substrate on which a SiC crystal is formed to a support substrate for supporting the SiC substrate, and a joining step for joining the SiC substrate to the support substrate through the SiC intermediate layer by pressing the SiC substrate and the support substrate mutually.SELECTED DRAWING: Figure 1
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Inventors:
MATSUMOTO YOSHIIE
Application Number:
JP2018041835A
Publication Date:
September 19, 2019
Filing Date:
March 08, 2018
Export Citation:
Assignee:
RAN TECHNICAL SERVICE KK
International Classes:
C30B29/36
Domestic Patent References:
| JP2011256053A | 2011-12-22 | |||
| JP2016013949A | 2016-01-28 | |||
| JP2017188204A | 2017-10-12 | |||
| JP2012116679A | 2012-06-21 | |||
| JP2011184224A | 2011-09-22 | |||
| JP2016018891A | 2016-02-01 |
Attorney, Agent or Firm:
Sonoda/Kobayashi Patent Business Corporation