Title:
METHOD FOR MANUFACTURING SILICON CARBIDE SINGLE CRYSTAL
Document Type and Number:
Japanese Patent JP2019156660
Kind Code:
A
Abstract:
To provide a method for manufacturing a silicon carbide single crystal including reduced carbon inclusions.SOLUTION: The method for manufacturing a silicon carbide single crystal, capable of sublimating a solid silicon carbide raw material in a growth vessel to grow a silicon carbide single crystal on a seed crystal substrate comprises: mixing tantalum (Ta) powder with carbon powder; depositing the mixture to the solid silicon carbide raw material in the growth vessel to be subjected to heating and sintering; and growing a silicon carbide single crystal after or while forming a tantalum carbide (TaC) film on the surface of the solid silicon carbide raw material.SELECTED DRAWING: Figure 1
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Inventors:
IKEDA HITOSHI
MATSUMOTO YUICHI
TAKAHASHI TORU
MATSUMOTO YUICHI
TAKAHASHI TORU
Application Number:
JP2018042289A
Publication Date:
September 19, 2019
Filing Date:
March 08, 2018
Export Citation:
Assignee:
SHINETSU HANDOTAI KK
International Classes:
C30B29/36; C23C14/06; C30B23/02
Domestic Patent References:
| JPH11116399A | 1999-04-27 |
Foreign References:
| CN105734671A | 2016-07-06 |
Attorney, Agent or Firm:
Mikio Yoshimiya
Toshihiro Kobayashi
Toshihiro Kobayashi