Title:
GRINDING METHOD OF SUBSTRATE
Document Type and Number:
Japanese Patent JP2020089945
Kind Code:
A
Abstract:
To provide a grinding method of a substrate using a temporary fixing tape which can perform griding/polishing of the substrate while suppressing or preventing the generation of a dimple on the substrate.SOLUTION: A grinding method of a substrate in the present invention includes a temporary fixing process of temporarily fixing a temporary fixing tape 200 which is provided with a support substrate 82 and an adhesive layer 81 and is composed of a laminate provided with a first layer 821 allowing the support substrate 82 to support a wafer 7 for semiconductor (substrate) and a second layer 822 having a cushioning property onto the wafer 7 for semiconductor having electrode pads 26 as protrusions on a surface 71 of one side face such that the surface 71 and the adhesive layer 81 are opposed to each other at a temperature higher than such a temperature that tanδ of a main material of the second layer 822 exhibits a peak, a grinding/polishing process of grinding or polishing a back surface 72 (the other side surface) at a temperature lower than such a temperature that tanδ exhibits the peak and a detaching process of detaching the semiconductor wafer 7 for semiconductor from the support substrate 82 by irradiating the adhesive layer 81 with energy rays.SELECTED DRAWING: Figure 5
Inventors:
NAGAO YOSHINORI
Application Number:
JP2018228566A
Publication Date:
June 11, 2020
Filing Date:
December 05, 2018
Export Citation:
Assignee:
SUMITOMO BAKELITE CO
International Classes:
B24B41/06; B24B7/04; H01L21/304
Domestic Patent References:
| JP2004014691A | 2004-01-15 | |||
| JP2004072084A | 2004-03-04 | |||
| JP2008053297A | 2008-03-06 |
Attorney, Agent or Firm:
Tatsuya Masuda
Kazuo Asahi
Kazuo Asahi