Title:
METHOD FOR MANUFACTURING SUBSTRATE WITH FINE UNEVEN STRUCTURE AND METHOD FOR MANUFACTURING ANTIREFLECTION STRUCTURE
Document Type and Number:
Japanese Patent JP2020202285
Kind Code:
A
Abstract:
To provide a method for manufacturing a substrate with a fine concavo-convex structure which can minutely form fine holes on the entire surface of a processing target surface of the substrate by mask-less dry etching, and a method for manufacturing an antireflection structure using the same.SOLUTION: A method for manufacturing a substrate with a fine concavo-convex structure performs dry etching on a Si-based substrate by using a gas (A) or a mixture gas including the gas (A) and the following diluted gas as an etching gas in a condition that pressure ranges from 1.1 to 20 Pa and bias power density ranges from 0.11 to 0.49 W/cm2: gas (A): at least one kind selected from the group consisting of Cl2, CCl4 and HCl, and diluted gas: at least one kind selected from the group consisting of Ar, H2 and N2.SELECTED DRAWING: Figure 1
Inventors:
DAI KOTARO
SHINOZUKA HIROSHI
SHINOZUKA HIROSHI
Application Number:
JP2019108001A
Publication Date:
December 17, 2020
Filing Date:
June 10, 2019
Export Citation:
Assignee:
OJI HOLDINGS CORP
International Classes:
H01L21/3065; G02B1/118
Attorney, Agent or Firm:
Yasushi Matsunuma
Yuichiro Kawagoe
Noriko Yanai
Shunsuke Fushimi
Tetsuya Kimitsuka
Yuichiro Kawagoe
Noriko Yanai
Shunsuke Fushimi
Tetsuya Kimitsuka