Title:
SiC EPITAXIAL WAFER, EVALUATION METHOD OF SiC SUBSTRATE AND SiC EPITAXIAL WAFER, AND MANUFACTURING METHOD FOR SiC DEVICE
Document Type and Number:
Japanese Patent JP2020202288
Kind Code:
A
Abstract:
To provide a SiC epitaxial wafer capable of grasping the positions of defects existing in a SiC substrate and a SiC epitaxial layer with high accuracy.SOLUTION: A SiC epitaxial wafer includes a SiC substrate having a marker defect on the main surface, and a SiC epitaxial layer formed on the main surface.SELECTED DRAWING: Figure 1
Inventors:
NISHIHARA SADATAKA
Application Number:
JP2019108113A
Publication Date:
December 17, 2020
Filing Date:
June 10, 2019
Export Citation:
Assignee:
SHOWA DENKO KK
International Classes:
H01L21/66
Domestic Patent References:
| JPH10120497A | 1998-05-12 | |||
| JP2018041942A | 2018-03-15 | |||
| JP2007318031A | 2007-12-06 |
Attorney, Agent or Firm:
Shu Oikawa
Norihiko Ara
Tomoo Katsumata
Norihiko Ara
Tomoo Katsumata