Title:
METHOD FOR MANUFACTURING SUBSTRATE WITH FINE UNEVEN STRUCTURE AND METHOD FOR MANUFACTURING ANTIREFLECTION STRUCTURE
Document Type and Number:
Japanese Patent JP2020202287
Kind Code:
A
Abstract:
To provide a method for manufacturing a substrate with a fine uneven structure that can minutely form holes on the surface of a substrate by mask-less dry etching while adjusting the hole diameter and depth.SOLUTION: A method for manufacturing a substrate with a fine uneven structure performs dry etching on a Si-based substrate by using a first etching gas, and then performs dry etching by using a second etching gas. First etching gas: gas (A), or a mixed gas of gas (A) and a diluent gas. Second etching gas: a mixed gas of gas (A) and gas (B), or a mixed gas of gas (A), gas (B) and diluted gas. Gas (A): at least one kind selected from the group consisting of Cl2, CCl4 and HCl. Gas (B): at least one kind selected from the group consisting of BCl2, BCl3, BC2, CF4, C4F8, C5F8, C2F6, C3F6, C4F6, CHF3, CH2F2, CH3F and C3F8.SELECTED DRAWING: Figure 1
Inventors:
DAI KOTARO
SHINOZUKA HIROSHI
SHINOZUKA HIROSHI
Application Number:
JP2019108093A
Publication Date:
December 17, 2020
Filing Date:
June 10, 2019
Export Citation:
Assignee:
OJI HOLDINGS CORP
International Classes:
H01L21/3065
Attorney, Agent or Firm:
Yasushi Matsunuma
Yuichiro Kawagoe
Noriko Yanai
Shunsuke Fushimi
Tetsuya Kimitsuka
Yuichiro Kawagoe
Noriko Yanai
Shunsuke Fushimi
Tetsuya Kimitsuka