Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021057381
Kind Code:
A
Abstract:
To suppress basal surface dislocation contained in a silicon carbide single crystal substrate from developing to a layer defect.SOLUTION: The silicon carbide semiconductor device, including a silicon carbide single crystal substrate 10 having one face 10a and another face 10b on the opposite side to the one face 10a and an epitaxial layer 12 constituted of silicon carbide arranged on the one face 10a, is structured so that more impurity element 11a than the another face 10b side is arranged on the one face 10a side in the silicon carbide single crystal substrate 10.SELECTED DRAWING: Figure 1
Inventors:
HAYAMA YUSUKE
UEHARA JUNICHI
KATO TAKEHIRO
YAMASHITA YUSUKE
UEHARA JUNICHI
KATO TAKEHIRO
YAMASHITA YUSUKE
Application Number:
JP2019177024A
Publication Date:
April 08, 2021
Filing Date:
September 27, 2019
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L29/78; C30B23/06; C30B29/36; H01L21/205; H01L21/322; H01L21/336; H01L29/12; H01L29/739
Domestic Patent References:
| JP2019102493A | 2019-06-24 | |||
| JP2021014378A | 2021-02-12 | |||
| JP2013107788A | 2013-06-06 | |||
| JP2013183064A | 2013-09-12 | |||
| JP2007246350A | 2007-09-27 | |||
| JP2019140242A | 2019-08-22 | |||
| JP2009167047A | 2009-07-30 | |||
| JP2017038001A | 2017-02-16 | |||
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Foreign References:
| WO2015064256A1 | 2015-05-07 |
Attorney, Agent or Firm:
Patent Business Corporation Yuai Patent Office