Title:
SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2021118250
Kind Code:
A
Abstract:
To execute removal processing with high uniformity at each in-plane part of a substrate in removing a silicon-containing film formed on a surface of the substrate.SOLUTION: A substrate processing method includes: a process of storing a substrate formed with a silicon-containing film on a surface thereof; a first process of supplying processing gas containing halogen-containing gas and basicity gas in the substrate and altering the silicon-containing film to generate reaction product; a second process of vaporizing the reaction product as a second pressure lower than the first pressure in the processing container; and a repetitive process of alternatively repeating the first process and the second process, the first process from twice on in the repetitive process including a process of supplying the processing gas to a substrate on which the reaction product remains.SELECTED DRAWING: Figure 2
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Inventors:
WOO JAEWON
Application Number:
JP2020010284A
Publication Date:
August 10, 2021
Filing Date:
January 24, 2020
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/302
Attorney, Agent or Firm:
Patent Corporation Yayoi Patent Office