Title:
SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2021118251
Kind Code:
A
Abstract:
To provide a semiconductor device capable of improving the drain voltage.SOLUTION: A semiconductor device has an electron transiting layer and an electron supply layer stacked on top of each other, a source electrode, a drain electrode and a gate electrode provided above the electron supply layer, a first cap layer provided on the electron supply layer and between the gate electrode and the drain electrode, and a negative charge generating layer provided on the first cap layer and generating negative charges.SELECTED DRAWING: Figure 3
Inventors:
MAKIYAMA KOZO
OZAKI SHIRO
YAMADA ATSUSHI
KOTANI JUNJI
OZAKI SHIRO
YAMADA ATSUSHI
KOTANI JUNJI
Application Number:
JP2020010323A
Publication Date:
August 10, 2021
Filing Date:
January 24, 2020
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338; H01L29/778; H01L29/812
Domestic Patent References:
| JP2017228571A | 2017-12-28 | |||
| JP2011114269A | 2011-06-09 | |||
| JP2015103780A | 2015-06-04 | |||
| JP2018010936A | 2018-01-18 | |||
| JP2014138110A | 2014-07-28 | |||
| JP2003297852A | 2003-10-17 |
Foreign References:
| US20150115326A1 | 2015-04-30 |
Attorney, Agent or Firm:
Tadashige Ito
Tadahiko Ito
Tadahiko Ito