【発明の名称】半導体スイッチ、例えば内燃機関の高電圧―点火スイッチ

Japanese Patent JP2783677

B2

PCT No. PCT/DE90/00123 Sec. 371 Date Nov. 20, 1991 Sec. 102(e) Date Nov. 20, 1991 PCT Filed Feb. 23, 1990 PCT Pub. No. WO90/15242 PCT Pub. Date Dec. 13, 1990.The invention relates to a semiconductor switch, in particular as an ignition voltage switch for applying an ignition voltage to a spark plug of an internal combustion engine, having a cascade circuit formed of series-connected semiconductor components for connecting an operating voltage through to a load, wherein the semiconductor components each have a depletion-layer capacitance, and the connection existing between each two semiconductor components forms a parasitic ground capacitance determined by the electrical field distribution. For symmetrical voltage distribution without additional wiring elements, it is provided that a breakover current (ik) flowing through the semiconductor components (T1-Tn) prior to attainment of the conductive state is located, relative to a displacement current (iver), within the range iver