【発明の名称】窒化ホウ素を用いた電子装置の作製方法 - Semiconductor Energy Laboratory Co., Ltd.

Title:

【発明の名称】窒化ホウ素を用いた電子装置の作製方法

Document Type and Number:

Japanese Patent JP2813990

Kind Code:

B2

Abstract:

A method of manufacturing an electronic device using boron nitrides comprises the steps of adding impurities in boron nitrides by ion implantation to form a doped region and directing a laser beam onto the doped region while the boron nitrides are placed in a vacuum or a non-oxidizing atmosphere.

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Inventors:

Sanpei Yamazaki
Kenji Ito
Shinya Tsunono
Naoki Hirose

Application Number:

JP21180089A

Publication Date:

October 22, 1998

Filing Date:

August 17, 1989

Export Citation:

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Assignee:

Semiconductor Energy Laboratory Co., Ltd.

International Classes:

C30B29/38; C30B31/22; C30B33/02; H01L21/00; H01L21/205; H01L21/265; H01L21/268; H01L21/425; H01L21/428; H01L33/10; H01L33/16; H01L33/30; H01L33/34; H01L33/42; H01L33/62; (IPC1-7): H01L21/265; C30B29/38; C30B31/22; C30B33/02; H01L21/205; H01L33/00

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