【発明の名称】半導体装置

Japanese Patent JP3340690

B2

PROBLEM TO BE SOLVED: To stabilize the operation of a voltage limiter circuit by including a MOS capacitor whose threshold voltage is negative in an internal voltage generating circuit generating internal voltages by receiving an operating power source voltage. SOLUTION: In drive circuits 7a, 7b, when wirings of outputs of the circuits intersect a wiring 12a, a feedback circuit is generated via the parasitic capacitance CC3 between wirings and operations of the circuits becomes unstable. In order to prevent this unstableness, the gain of a loop is made to be sufficiently small by inserting capacitors CR1 , CR2 whose capacitances are sufficiently larger than parastic capacitances CC1 to CC3 . Capacitors to be used in here are formed between gates and a substrate surface across a gate insulating film and large capacitances can be obtained with relatively small areas by using a thin gate insulating film as a capacitor insulating film. Since there are wells under the gates, the threshold voltage of the capacitors is negative and capacitances of the capacitors becomes roughly constant as long as a voltage of one direction is applied on them so that sides of gates become positive.

JPH10283799	SEMICONDUCTOR STORAGE DEVICE
JPS5526680	SEMICONDUCTOR INTEGRATED CIRCUIT

Masashi Horiguchi
Masakazu Aoki
Kiyoo Ito
Yoshinobu Nakagome
Shinichi Ikenaga
Eto Jun
Norio Miyake
Takaaki Noda
Hitoshi Tanaka

JP2964899A

November 05, 2002

February 08, 1999

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株式会社日立製作所
株式会社日立超エル・エス・アイ・システムズ

G11C11/413; G11C11/407; H01L21/8242; H01L27/108; (IPC1-7): G11C11/407; G11C11/413; H01L21/8242; H01L27/108

JP62121990A
JP61262078A
JP56148859A

Yasuo Sakuta

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