Title:
【発明の名称】強誘電性メモリの操作方法
Document Type and Number:
Japanese Patent JP3439222
Kind Code:
B2
Abstract:
Thin film ferroelectric materials for use in integrated memory circuits, such as FERAMS and the like, contain strontium bismuth niobium tantalate having an empirical formula SrBi2+E(NbXTa2-X)O9+3E/2, wherein E is a number representing an excess amount of bismuth ranging from zero to 2; and X is a number representing an excess amount of niobium ranging from 0.01 to 0.9. The thin films demonstrate an exceptional resistance to polarization imprinting when challenged with unidirectional voltage pulses.
Inventors:
Kucharo, Joseph Dee
Sorayapang, Narayan
Pas de Arajo, Carlos A.
Larry Dee, Macmillan
Sorayapang, Narayan
Pas de Arajo, Carlos A.
Larry Dee, Macmillan
Application Number:
JP53851898A
Publication Date:
August 25, 2003
Filing Date:
February 04, 1998
Export Citation:
Assignee:
SYMETRIX CORPORATION
Matsushita Electric Industrial Co., Ltd
Matsushita Electric Industrial Co., Ltd
International Classes:
C01G35/00; G11C11/56; H01L21/316; H01L21/8242; H01L21/8246; H01L27/10; H01L27/105; H01L27/108; H01L27/115; H01L29/92; (IPC1-7): H01L27/105
Other References:
【文献】国際公開96/030938(WO,A1)
Attorney, Agent or Firm:
Shusaku Yamamoto