Title:
窒化ガリウム系半導体素子及びその製造方法
Document Type and Number:
Japanese Patent JP4178836
Kind Code:
B2
Abstract:
The present invention provides a gallium nitride semiconductor device including an electrode composed of a metallic film on an underlying gallium nitride compound semiconductor layer. The gallium nitride semiconductor device is characterized in that recessed portions are present dispersely over the whole surface area of the underlying compound semiconductor layer in contact with the electrode metallic film in such a manner that at least two recessed portions having a depth greater than the lattice constant of crystals constituting the underlying compound semiconductor layer are present on a width direction line in any 1 mum width region of the whole surface area.
Inventors:
Asahi Yuki
Hiroshi Nakajima
Osamu Goto
Tsuyoshi Tojo
Hiroshi Nakajima
Osamu Goto
Tsuyoshi Tojo
Application Number:
JP2002155507A
Publication Date:
November 12, 2008
Filing Date:
May 29, 2002
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/205; H01L21/28; H01L33/22; H01L33/32; H01L33/36; H01L33/38; H01S5/042
Domestic Patent References:
| JP2002016312A | ||||
| JP10065213A | ||||
| JP60175468A | ||||
| JP1310538A | ||||
| JP58004977A | ||||
| JP52059582A | ||||
| JP3280532A | ||||
| JP63124461A |
Attorney, Agent or Firm:
Koichi Mori