Title:
半導体装置
Document Type and Number:
Japanese Patent JP4289123
Kind Code:
B2
Abstract:
A semiconductor device includes an active region, an alternating conductivity type layer, and an insulation region surrounding the alternating conductivity type layer provided in a periphery section as a voltage withstanding section. The insulation region is made of an insulator with the critical electric field strength higher than that of the semiconductor and reaches an n+-drain layer on the bottom surface side of the device from a surface on the side on which a surface structure section is formed. In the alternating conductivity type layer, the width of the p-type partition region adjacent to the insulation region is made narrower than the width of the p-type partition region not adjacent to the insulation region to ensure a balanced state of charges at the end of the drift section made up of the alternating conductivity type layer. A high breakdown voltage is ensured with the length of the periphery section shortened.
Inventors:
Yasuhiko Onishi
Takeyoshi Nishimura
Yasushi Niimura
Kazu Abe
Takeyoshi Nishimura
Yasushi Niimura
Kazu Abe
Application Number:
JP2003369566A
Publication Date:
July 01, 2009
Filing Date:
October 29, 2003
Export Citation:
Assignee:
Fuji Electric Device Technology Co., Ltd.
International Classes:
H01L29/06; H01L29/76; H01L29/78
Domestic Patent References:
| JP2001244461A | ||||
| JP2000277726A | ||||
| JP2001015752A |
Attorney, Agent or Firm:
Akinori Sakai
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