Title:
窒化ガリウム系化合物半導体のウエハー
Document Type and Number:
Japanese Patent JP4293061
Kind Code:
B2
Inventors:
Shuji Nakamura
Iwasa adult
Iwasa adult
Application Number:
JP2004169261A
Publication Date:
July 08, 2009
Filing Date:
June 07, 2004
Export Citation:
Assignee:
Nichia Corporation
International Classes:
H01L21/205; H01L21/324; H01L33/32
Domestic Patent References:
| JP64021991A | ||||
| JP2229475A | ||||
| JP56150880A | ||||
| JP62178530U | ||||
| JP339835U | ||||
| JP2257679A | ||||
| JP59228776A | ||||
| JP3203388A |
Foreign References:
| US5306662 |
Other References:
S.NAKAMURA, et.al.,Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers,Japanese Journal of Applied Physics,1991年10月,Vol.30, No.10A,L1708-L1711
Attorney, Agent or Firm:
Yasuhiro Toyosu
Toshisu Koji
Toshisu Koji