量子構造体を有する半導体素子とその製造方法

Title:

量子構造体を有する半導体素子とその製造方法

Document Type and Number:

Japanese Patent JP4362874

Kind Code:

B2

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Inventors:

Westwater Jonathan
Gossain Durham Pal
Hirano Hidetaka
Setsuo Usui

Application Number:

JP23743798A

Publication Date:

November 11, 2009

Filing Date:

August 24, 1998

Export Citation:

Assignee:

ソニー株式会社

International Classes:

H01L29/06; H01L29/66

Domestic Patent References:

Attorney, Agent or Firm:

Yoshitsuno Kakuda
Hironobu Isoyama
Hidemori Matsukuma

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