Title:
METHOD OF MANUFACTURING VERTICAL POWER ELEMENT
Document Type and Number:
Japanese Patent JP2001210656
Kind Code:
A
Abstract:
To provide a method for manufacturing a vertical power element on a substrate formed of a lightly-doped silicon wafer.
Vertical holes are made on the surface of a lower side of the substrate. A second conductive type dopant which is opposite to the substrate is diffused from the holes. Similar holes are made on the surface of the upper side of the substrate, an isolating wall is regulated and second conductive type dopant which is heavily doped from the hole is diffused. The holes corresponding to the isolating wall are sufficiently close to a diffusion area, and they are connected in the lateral direction and the vertical direction.
Inventors:
MATHIEU ROY
Application Number:
JP2000390445A
Publication Date:
August 03, 2001
Filing Date:
December 22, 2000
Export Citation:
Assignee:
ST MICROELECTRONICS SA
International Classes:
H01L21/332; H01L21/331; H01L21/76; H01L21/761; H01L29/06; H01L29/08; H01L29/10; H01L29/74; H01L29/78; H01L21/225; (IPC1-7): H01L21/332; H01L21/761; H01L29/74; H01L29/78
Attorney, Agent or Firm:
Keiichi Yamamoto
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