Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP4365712
Kind Code:
B2
Abstract:
Two ferroelectric capacitors including a PZT film are connected to one MOS transistor. Electrodes of the ferroelectric capacitor are arranged above a main plane of a substrate parallel to the main plane. Therefore, high capacity can be obtained easily. Furthermore, a (001) direction of the PZT film is parallel to the virtual straight line linking between the two electrodes. Therefore, a direction in which an electric field is applied coincides with a direction of a polarization axis, so that high electric charge amount of remanent polarization can be obtained.
Inventors:
Kenji Maruyama
Cross jeffrey scott
Cross jeffrey scott
Application Number:
JP2004089338A
Publication Date:
November 18, 2009
Filing Date:
March 25, 2004
Export Citation:
Assignee:
富士通株式会社
International Classes:
H01L21/8246; H01L27/105; H01L21/00; H01L27/115
Domestic Patent References:
| JP2002299572A | ||||
| JP3293775A | ||||
| JP9245525A | ||||
| JP2001267521A |
Attorney, Agent or Firm:
Takayoshi Kokubun