Title:
フッ素含有インジウム-錫酸化物焼結体及びその製造方法
Document Type and Number:
Japanese Patent JP4437934
Kind Code:
B2
Abstract:
To provide novel technology capable of manufacturing a high-density sintered compact for an F-ITO target in order to form a transparent conductive film having excellent surface smoothness. SOLUTION: The method for manufacturing the sintered compact of the fluorine-containing indium-tin oxide comprising applying a DC pulse current under pressurization to powder raw materials containing indium, tin, oxygen and fluorine; the target material for sputtering composed of the sintered compact of the fluorine-containing indium-tin oxide obtained by the method described in the previous item; the thin film manufactured by using the target material for sputtering described in the previous item; the thin film, described in the previous item, wherein the ratio (surface smoothness; [Delta]Z/d) of the height difference ([Delta]Z; difference between the maximum value and minimum value of the film thicknesses) by the ruggedness of the thin film to the mean value (d) of the thin film thickness does not exceed 10%.
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Inventors:
Tomo Takeuchi
Hiroyuki Kageyama
Hiromi Nakazawa
Toshiyuki Atami
Hiroyuki Kageyama
Hiromi Nakazawa
Toshiyuki Atami
Application Number:
JP2004091739A
Publication Date:
March 24, 2010
Filing Date:
March 26, 2004
Export Citation:
Assignee:
National Institute of Advanced Industrial Science and Technology
Geomatec Co., Ltd.
Geomatec Co., Ltd.
International Classes:
C04B35/457; C04B35/64; C23C14/34; H01B5/14
Domestic Patent References:
| JP1283369A | ||||
| JP2003081673A | ||||
| JP2000128648A |
Attorney, Agent or Firm:
Eiji Saegusa