Title:
誘導結合形プラズマ処理装置
Document Type and Number:
Japanese Patent JP4469054
Kind Code:
B2
Abstract:
This invention is to provide an inductively coupled plasma treatment apparatus in which the supply of the high frequency power into a treatment chamber is not impeded by depositing a metal film on the surface of a dielectric window. A plurality of slits 503 are formed in a mask member 50 mounted on the lower side of the dielectric window (a unified body of a window member 25 and a disposable plate 27). A part of the metal atoms ground from a sample during the plasma etching and scattered therearound is adhered to the surface of the mask member 50 to deposit the metal film, while no metal film is deposited on positions of the slits 503, and a blank area is formed. Since the passage of the induced current along a winding of a coil electrode 26 is broken by the blank area, no loss is generated in the high frequency power by the current.
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Inventors:
Michihiro Hiramoto
Hirohiko Nakano
Tsuji Makoto
Hirohiko Nakano
Tsuji Makoto
Application Number:
JP2000067107A
Publication Date:
May 26, 2010
Filing Date:
March 10, 2000
Export Citation:
Assignee:
SAMCO Co., Ltd.
International Classes:
C23F4/00; H05H1/46; H01L21/205; H01L21/302; H01L21/3065
Domestic Patent References:
| JP9050898A |
Foreign References:
| WO1999026281A1 |
Attorney, Agent or Firm:
Kyoto International Patent Office
Ryouhei Kobayashi
Ryouhei Kobayashi