Title:
光電変換装置および光電変換装置の製造方法
Document Type and Number:
Japanese Patent JP4485766
Kind Code:
B2
Abstract:
To provide an excellent photoelectric conversion device that is high in generation efficiency.
The photoelectric conversion device is constituted by forming at least one conductivity type semiconductor layer 3 on a crystalline semiconductor substrate 1. The semiconductor layer 3 has one or more kinds of metallic elements selected from among W, Ta, Mo, Ti, Ir, Nb, Pd, Pt, and Ru.
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
Komoda Manabu
Application Number:
JP2003205164A
Publication Date:
June 23, 2010
Filing Date:
July 31, 2003
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L21/205; H01L31/04
Domestic Patent References:
| JP2001313272A | ||||
| JP2003124133A |
Foreign References:
| WO2003061018A1 |
Other References:
Japanese Journal of Applied Physics, Vol.37(1998),pp.3175-3187