Title:
光電変換装置の製造方法
Document Type and Number:
Japanese Patent JP4485767
Kind Code:
B2
Abstract:
To provide a photoelectric conversion device that is high in efficiency and reliability.
The photoelectric conversion device is provided with a photoactive layer containing an amorphous silicon film which is ≥0.98 in the ratio of the existing density of Si-H coupled states to the sum of the existing densities of Si-H coupled states and Si-H
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
Komoda Manabu
Hirofumi Senda
Hirofumi Senda
Application Number:
JP2003205204A
Publication Date:
June 23, 2010
Filing Date:
July 31, 2003
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L31/04
Domestic Patent References:
| JP4342120A | ||||
| JP2001044468A | ||||
| JP63043313A | ||||
| JP7050268A |