Title:
半導体記憶装置及び電子機器
Document Type and Number:
Japanese Patent JP4647460
Kind Code:
B2
More Like This:
| JP4337963 | How to program a multi-bit flash memory cell |
| JP2012079377 | SEMICONDUCTOR MEMORY DEVICE |
| JPH0697557 | [Title of Invention] Memory device |
Inventors:
Yoshi Ota
Application Number:
JP2005309855A
Publication Date:
March 09, 2011
Filing Date:
October 25, 2005
Export Citation:
Assignee:
Sharp Corporation
International Classes:
G11C16/04; G11C16/02; G11C16/06
Domestic Patent References:
| JP2004348788A |
Foreign References:
| US6744674 |
Attorney, Agent or Firm:
Hiroshi Yamazaki
Atsushi Maeda
Atsushi Morikawa
Atsushi Maeda
Atsushi Morikawa