To provide the diamond ultraviolet ray sensor element which is enhanced in sensitivity at least around 1,000 times to the conventional limit in the receiving sensitivity to the ultraviolet ray of 260 nm on less.
The diamond ultraviolet ray sensor element is a photoconductive sensor element for detecting the light irradiating the light receiving part by the variation of the photo-induced current of the light receiving material. The diamond ultraviolet ray sensor is constituted with a diamond single crystal for the light receiving part essentially including nitrogen atoms by the high temperature high pressure synthetic method, wherein the main carrier of surface conductive layer is hole. In this case, the ultraviolet ray sensor is provided with the sensing mechanism based on the electric conductivity of the optical excitation formation carrier through the specialty of the hydrogenated surface of the diamond semiconductor and the impurity level of nitrogen, boron, or boron-nitrogen complex in the diamond existing near to the surface.
COPYRIGHT: (C)2007,JPO&INPIT
| JP2002340678 | INFRARED SENSOR |
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Jose Antonio Albalets
Mayon Ryo
| JP2005310963A |
| WO1999034646A1 |