Title:
p型Ga2O3膜の製造方法およびpn接合型Ga2O3膜の製造方法
Document Type and Number:
Japanese Patent JP4803634
Kind Code:
B2
Abstract:
Disclosed are a method for producing a p-type Ga2O3 film and a method for producing a pn junction-type Ga2O3 film which enable to form a thin film composed of a high-quality Ga2O3 compound semiconductor. Specifically, the pressure in a vacuum chamber ( 52 ) is reduced, and while introducing oxygen radicals, a cell ( 55 a) is heated for producing a Ga molecular beam ( 90 ) and a cell ( 55 b) is heated for producing an Mg molecular beam ( 90 ). Then, a substrate ( 25 ) composed of a Ga2O3 compound is irradiated with the Ga molecular beam ( 90 ) and the Mg molecular beam ( 90 ), so that a p-type beta-Ga2O3 film composed of p-type beta-Ga2O3 is grown on the substrate ( 25 ).
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Inventors:
Noboru Ichinose
Francisco Garcia Villora
Kazuo Aoki
Francisco Garcia Villora
Francisco Garcia Villora
Kazuo Aoki
Francisco Garcia Villora
Application Number:
JP2004290845A
Publication Date:
October 26, 2011
Filing Date:
October 01, 2004
Export Citation:
Assignee:
Waseda University
International Classes:
H01L21/203; C23C14/08; H01L33/00; H01L33/26
Domestic Patent References:
| JP63142812A | ||||
| JP3203226A | ||||
| JP2002093243A |
Foreign References:
| WO2004074556A1 |
Attorney, Agent or Firm:
Tadao Hirata