Title:
半導体素子のキャパシタの製造方法
Document Type and Number:
Japanese Patent JP5175040
Kind Code:
B2
Abstract:
A method for fabricating a capacitor in a semiconductor device is provided. The method includes forming an insulation layer over a substrate; flushing a metal source onto the insulation layer to change a characteristic of a surface of the insulation layer to improve adherence of a metal-based material to the surface of the insulation layer; forming a storage node comprising the metal-based material over the flushed insulation layer; and sequentially forming a dielectric layer and a plate electrode over the metal-based storage node.
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Inventors:
Cheap victory
Yoshinori Shin
Kim Jin Hee
Park
Song Song
Assortment
Yoshinori Shin
Kim Jin Hee
Park
Song Song
Assortment
Application Number:
JP2006246826A
Publication Date:
April 03, 2013
Filing Date:
September 12, 2006
Export Citation:
Assignee:
SK hynix Inc.
International Classes:
H01L21/8242; H01L27/108
Domestic Patent References:
| JP2002170940A | ||||
| JP2002076302A | ||||
| JP2006505955A | ||||
| JP2003017561A | ||||
| JP2000106357A |
Foreign References:
| WO2004044984A1 |
Attorney, Agent or Firm:
Patent Business Corporation Saegusa International Patent Office