Title:
光検出装置
Document Type and Number:
Japanese Patent JP5410901
Kind Code:
B2
Abstract:
A light detecting apparatus is provided with a semiconductor substrate, a first electrode layer, and a second electrode layer. The semiconductor substrate has a first conductivity type first semiconductor region, and a second conductivity type second semiconductor region formed on the first semiconductor region and constituting a photodiode based on a pn junction formed between the first semiconductor region and the second semiconductor region. The first electrode layer is arranged above the second semiconductor region so as to be opposed to the second semiconductor region and is electrically connected to the second semiconductor region. The second electrode layer is arranged above the first electrode layer so as to be opposed to the first electrode layer and forms a capacitance component connected to the photodiode, between the first electrode layer and the second electrode layer.
Inventors:
Takashi Suzuki
Application Number:
JP2009221037A
Publication Date:
February 05, 2014
Filing Date:
September 25, 2009
Export Citation:
Assignee:
Hamamatsu Photonics Co., Ltd.
International Classes:
H01L31/10
Domestic Patent References:
| JP2002231974A | ||||
| JP6013644A | ||||
| JP2000036615A | ||||
| JP2263123A | ||||
| JP2008251770A |
Attorney, Agent or Firm:
Yoshiki Hasegawa
Shiro Terasaki
Satoru Ishida
Shiro Terasaki
Satoru Ishida