Title:
相変化型メモリー用スパッタリングターゲット及び同ターゲットを用いて形成された相変化メモリー用膜並びに及び同ターゲットの製造方法
Document Type and Number:
Japanese Patent JP5420594
Kind Code:
B2
Abstract:
The present invention provides a sputtering target for a phase change memory and a phase change memory film formed with such a target, and the manufacturing method thereof, characterized in that the sputtering target is composed from elements of not less than a three component system and has as its principal component one or more components selected from stibium, tellurium and selenium, and the compositional deviation in relation to the intended composition is +/-1.0at% or less. This sputtering target for a phase change memory is capable of reducing, as much as possible, impurities that cause the reduction in the number of times rewriting can be conducted as a result of such impurities segregating and condensing in the vicinity of the boundary face of the memory point and non-memory point; in particular, impurity elements that affect the crystallization speed, reducing the compositional deviation of the target in relation to the intended composition, and improving the rewriting properties and crystallization speed of the phase change memory by suppressing the compositional segregation of the target.
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Inventors:
Masataka Yahagi
Yuichiro Shindo
Hideo Takami
Yuichiro Shindo
Hideo Takami
Application Number:
JP2011139436A
Publication Date:
February 19, 2014
Filing Date:
June 23, 2011
Export Citation:
Assignee:
jx Nippon Mining & Metals Co., Ltd.
International Classes:
G11B7/26; C22C12/00; C23C14/06; C23C14/34; G11B7/243; G11B7/2433; H01L45/00
Domestic Patent References:
| JP5047053A | ||||
| JP10081962A | ||||
| JP1062466A | ||||
| JP3162570A | ||||
| JP2000239836A | ||||
| JP11335821A | ||||
| JP10060634A | ||||
| JP10188372A | ||||
| JP62287070A |
Attorney, Agent or Firm:
Isamu Ogoshi