Title:
プラズマ処理装置及びプラズマ処理方法
Document Type and Number:
Japanese Patent JP5592098
Kind Code:
B2
Abstract:
A plasma processing apparatus includes: an evacuable processing chamber including a dielectric window; a substrate supporting unit, provided in the processing chamber, for mounting thereon a target substrate; a processing gas supply unit for supplying a desired processing gas to the processing chamber to perform a plasma process on the target substrate; a first RF antenna, provided on the dielectric window, for generating a plasma by an inductive coupling in the processing chamber; and a first RF power supply unit for supplying an RF power to the first RF antenna. The first RF antenna includes a primary coil provided on or above the dielectric window and electrically connected to the first RF power supply unit; and a secondary coil provided such that the coils are coupled with each other by an electromagnetic induction therebetween while being arranged closer to a bottom surface of the dielectric window than the primary coil.
Inventors:
Yohei Yamazawa
Masashi Saito
傳寳 One tree
Chishio Koshimizu
山涌 Pure
Masashi Saito
傳寳 One tree
Chishio Koshimizu
山涌 Pure
Application Number:
JP2009245990A
Publication Date:
September 17, 2014
Filing Date:
October 27, 2009
Export Citation:
Assignee:
Tokyo Electron, Ltd.
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Kiyotaka Sasaki