Title:
半導体装置の製造方法
Document Type and Number:
Japanese Patent JP5621442
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device capable of improving throughput when trenches are filled with impurity layers by epitaxial growth.SOLUTION: The width of trenches 2a for forming p-type regions 3 is formed wide. After the trenches 2a are filled with p-type layers, the p-type regions 3 narrower than the trenches 2a are formed by thermal diffusion of an n-type impurity from an n-type drift layer 2. Because the width of the trenches 2a is wider than that of trenches J2a, epitaxial growth can be performed under a condition that allows a higher growth rate when the trenches 2a are filled by the epitaxial growth. For this reason, a time required for the epitaxial growth can be shortened, thereby improving throughput.
Inventors:
柴田 巧
松井 正樹
野上 彰二
山岡智則
松井 正樹
野上 彰二
山岡智則
Application Number:
JP2010205793A
Publication Date:
November 12, 2014
Filing Date:
September 14, 2010
Export Citation:
Assignee:
株式会社デンソー
株式会社ＳＵＭＣＯ
株式会社ＳＵＭＣＯ
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/739
Attorney, Agent or Firm:
Patent business corporation ゆうあい patent firm