Title:
プラズマ処理方法
Document Type and Number:
Japanese Patent JP5714004
Kind Code:
B2
Abstract:
A method for manufacturing a semiconductor device having fluorocarbon layers as insulating layers includes the steps of forming a first fluorocarbon (CFx1) layer using plasma excited by microwave power and forming a second fluorocarbon (CFx2) layer using plasma excited by an RF power.
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Inventors:
Hiroyuki Takaba
Application Number:
JP2012517495A
Publication Date:
May 07, 2015
Filing Date:
June 25, 2010
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/314; C23C16/30; H01L21/31
Domestic Patent References:
| JP10335322A | ||||
| JP2001521045A | ||||
| JP2004006983A | ||||
| JP7142730A | ||||
| JP11074204A | ||||
| JP2192402A | ||||
| JP11233501A |
Foreign References:
| US6528865 |
Other References:
後藤俊夫,次世代プラズマプロセスへの展開(まとめ),明日を拓くプラズマプロセス-プラズマをどのように使い,何を生みだせるか?-,日本,応用物理学会,1996年 9月,第19回応用物理学会スクール,71-85,JSAP Catalog Number:AP961324
Attorney, Agent or Firm:
Tadahiko Ito