Title:
成膜装置
Document Type and Number:
Japanese Patent JP5884500
Kind Code:
B2
Abstract:
A film deposition apparatus deposits a thin film on a substrate by repeating a cycle of supplying plural kinds of process gases that react with each other in a vacuum chamber. The film deposition apparatus includes a turntable to hold a substrate thereon and to rotate the substrate, and a plurality of process gas supplying parts. At least one of the process gas supplying parts extends from the center to the periphery and is formed as a gas nozzle including gas discharge holes. The gas discharge holes are formed along a length direction of the gas nozzle. The film deposition apparatus also includes current plates provided on upstream and downstream sides in a rotational direction of the turntable and extending along the length direction of the gas nozzle, and having at least one bent section bent downward from an outer edge of the current plates.
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Inventors:
Katohisashi Kato
Toshiyuki Nakatsubo
Ushikubo Shigehiro
Toshiyuki Nakatsubo
Ushikubo Shigehiro
Application Number:
JP2012008047A
Publication Date:
March 15, 2016
Filing Date:
January 18, 2012
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/31; C23C16/455
Domestic Patent References:
| JP1134911A | ||||
| JP5211122A | ||||
| JP4023429A | ||||
| JP2010056472A | ||||
| JP2010087238A | ||||
| JP2011071412A | ||||
| JP2011100956A | ||||
| JP2011124384A | ||||
| JP2011134996A | ||||
| JP2011151343A | ||||
| JP2013503498A |
Foreign References:
| US20040052972 | ||||
| US20110139074 | ||||
| US20110155057 | ||||
| US20110214611 | ||||
| US20110226178 |
Attorney, Agent or Firm:
Toshio Inoue