Title:
ＣｄＴｅ系化合物単結晶及びその製造方法
Document Type and Number:
Japanese Patent JP6448789
Kind Code:
B2
Abstract:
Provided are a high resistance CdTe-based compound single crystal with miniaturized Te precipitates and a method for producing the same. According to one embodiment of the present invention, a CdTe based compound single crystal is provided including a precipitate having a particle size of less than 0.1 µm obtained from an analysis by a light scattering tomography method. In the CdTe based compound single crystal, resistivity may be 1×10 7 ©cm or more. In addition, in the CdTe based compound single crystal, a precipitate having a particle size of 0.1 µm or more obtained from the analysis by the light scattering tomography method is not detected. In the CdTe based compound single crystal, the precipitate may be a Te precipitate.
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Inventors:
Koji Murakami
Akira Noda
Akira Noda
Application Number:
JP2017527094A
Publication Date:
January 09, 2019
Filing Date:
March 29, 2016
Export Citation:
Assignee:
JX Nippon Mining & Metals Co., Ltd.
International Classes:
C30B29/48; C30B33/02
Domestic Patent References:
| JP2004238268A | ||||
| JP3232461B2 | ||||
| JP2832241B2 |
Foreign References:
| US7758843 |
Attorney, Agent or Firm:
Axis International Patent Business Corporation