Title:
反応性スパッタリングの成膜装置、および成膜方法
Document Type and Number:
Japanese Patent JP6672204
Kind Code:
B2
Abstract:
A reactive sputtering apparatus performs deposition in any of compound, transition, and metallic modes by employing a target and reactive gas, wherein the reactive sputtering apparatus includes an inert-gas feeding unit, a reactive-gas feeding unit, a power supply unit to supply electric power to the target, a detection unit to detect plasma emission generated upon supply of the electric power to the target, and a control unit to adjust a reactive-gas flow rate to maintain, at a designated value, plasma emission intensity at a wavelength or a value calculated from plasma emission intensities at plural wavelengths, and wherein the control unit controls the designated value for the plasma emission intensity or the calculated value thereof such that a ratio V/Vc of a cathode voltage V in the transition mode to Vc in the compound mode comes closer to a preset value, those voltages being detected during the deposition.
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Inventors:
Hiroki Tamyo
Application Number:
JP2017047967A
Publication Date:
March 25, 2020
Filing Date:
March 14, 2017
Export Citation:
Assignee:
Canon Inc
International Classes:
C23C14/34; H05H1/46
Domestic Patent References:
| JP2002180247A | ||||
| JP2016194626A | ||||
| JP10237642A |
Attorney, Agent or Firm:
Takuma Abe
Sogo Kuroiwa
Sogo Kuroiwa