Title:
半導体素子の検査装置
Document Type and Number:
Japanese Patent JP6790974
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To propose an inspection device with which it is possible to inspect an IGBT having snapback characteristic and an IGBT that does not, using a current source that applies a voltage lower than a snapback voltage.SOLUTION: Provided is an inspection device for semiconductor elements having an IGBT, comprising a first circuit and a second circuit connected in parallel between a first terminal (emitter) and a second terminal (collector). The first circuit includes a current source for sending a current in a direction from the first terminal to the second terminal in the first circuit and a coil connected in series to the current source. The second circuit includes a Zener diode and a relay connected in series to the Zener diode. The Zener voltage of the Zener diode is higher than the rise voltage of the IGBT and lower than the rated voltage of the current source. The relay turns off after the Zener diode turns on.SELECTED DRAWING: Figure 2
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Inventors:
Yoshinori Ishimoto
Application Number:
JP2017076213A
Publication Date:
November 25, 2020
Filing Date:
April 06, 2017
Export Citation:
Assignee:
株式会社デンソー
International Classes:
G01R31/26; H01L21/66
Domestic Patent References:
| JP2012032327A | ||||
| JP63090781A | ||||
| JP62220877A | ||||
| JP2012229974A |
Foreign References:
| US20160041220 |
Attorney, Agent or Firm:
Kaiyu International Patent Office