Title:
酸化ガリウム膜の成膜方法
Document Type and Number:
Japanese Patent JP6839694
Kind Code:
B2
Abstract:
A method of forming a gallium oxide film is provided, and the method may include supplying mist of a material solution comprising gallium atoms and chlorine atoms to a surface of a substrate while heating the substrate so as to form the gallium oxide film on the surface of the substrate, in which a molar concentration of chlorine in the material solution is equal to or more than 3.0 times and equal to or less than 4.5 times a molar concentration of gallium in the material solution.
More Like This:
Inventors:
Tatsuji Nagaoka
Hiroyuki Nishinaka
Masahiro Yoshimoto
Hiroyuki Nishinaka
Masahiro Yoshimoto
Application Number:
JP2018235359A
Publication Date:
March 10, 2021
Filing Date:
December 17, 2018
Export Citation:
Assignee:
株式会社デンソー
国立大学法人京都工芸繊維大学
国立大学法人京都工芸繊維大学
International Classes:
H01L21/365; C23C16/40; C23C16/448; H01L21/368
Domestic Patent References:
| JP2016207911A | ||||
| JP2016079485A | ||||
| JP11157836A | ||||
| JP1004435A | ||||
| JP2014234337A | ||||
| JP2018070422A | ||||
| JP2007189128A | ||||
| JP2012231103A | ||||
| JP2001354426A |
Foreign References:
| WO2016035696A1 | ||||
| WO2018052097A1 |
Other References:
Hyung-Gon Kim, 外1名,Optical properties of β-Ga2O3 and α-Ga2O3:Co thin films grown by spray pyrolysis,Journal of Applied Physics,1987年 9月 1日,Vol. 62, No. 5,pp. 2000-2002
Attorney, Agent or Firm:
Kaiyu International Patent Office