Title:
スパッタ装置およびスパッタ方法
Document Type and Number:
Japanese Patent JP6854450
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a sputtering apparatus and a sputtering method capable of stably depositing a high-quality film.SOLUTION: A sputtering apparatus that deposits a thin film on a substrate by generating plasma in a vacuum chamber includes the vacuum chamber in which a target material and the substrate are arranged facing each other, a DC power source electrically connected to the target material, and a pulsing unit to pulse the current from the DC power source to the target material. The apparatus further includes an ammeter to measure the current from the DC power source to the pulsing unit, a power source controller to feedback-control the DC power source so that a current value measured by the ammeter agrees with a predetermined value, and a pulse controller to inform the pulsing unit of a pulse cycle deviating from a control cycle of DC power source controlled by the power source controller.SELECTED DRAWING: Figure 1
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Inventors:
Daisuke Suetsugu
Masaaki Tanabe
Akira Okuda
Kenmasa Takii
Masaaki Tanabe
Akira Okuda
Kenmasa Takii
Application Number:
JP2017162727A
Publication Date:
April 07, 2021
Filing Date:
August 25, 2017
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
C23C14/34; H01L21/203
Domestic Patent References:
| JP2010116578A | ||||
| JP2013082993A | ||||
| JP2010157511A |
Foreign References:
| US5993613 | ||||
| US20060081459 |
Attorney, Agent or Firm:
Michiko Matsutani
Hiroshi Okabe
Kazuhisa Inaba
Hiroshi Okabe
Kazuhisa Inaba